Near infrared photonic devices based on Er-doped GaN and InGaN

Please cite this article in press as: R. Dahal et a Er-doped III-nitride semiconductors have emerged as very attractive materials to achieve photonic devices with multiple functionalities for photonic integrated circuits (PICs). Optical sources and amplifiers based on these materials, particularly GaN and InGaN alloys, can operate at 1.54 lm and are expected to be temperature insensitive and have high signal gain with low noise. There is also the potential for these devices to be electrically pumped and to be integrated onto PICs, which is not possible with either Er-doped silica glasses or narrow bandgap semiconductors like InGaAsP. Here we present results on near infrared emitters and optical amplifiers based on Er-doped GaN/InGaN epilayers grown on different substrates by metal organic chemical vapor deposition (MOCVD). In particular, we report on chip-size current injected emitters and amplifiers fabricated by heterogeneously integrating Er-doped GaN/InGaN epilayers with UV nitride light-emitting diodes. The feasibility of developing electrically pumped optical amplifiers for PIC integration will also be discussed. 2010 Elsevier B.V. All rights reserved.